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光(guang)(guang)(guang)伏(fu)(fu)逆(ni)變(bian)器(qi)(qi)將(jiang)(jiang)光(guang)(guang)(guang)伏(fu)(fu)面板(ban)產(chan)生(sheng)的(de)(de)(de)(de)直流(liu)(liu)電轉化(hua)為交流(liu)(liu)電以用(yong)(yong)于電網(wang)(wang)，是(shi)太(tai)陽(yang)能(neng)(neng)(neng)光(guang)(guang)(guang)伏(fu)(fu)發(fa)電系(xi)(xi)統的(de)(de)(de)(de)核心部件(jian)。光(guang)(guang)(guang)伏(fu)(fu)逆(ni)變(bian)器(qi)(qi)的(de)(de)(de)(de)轉化(hua)效(xiao)(xiao)率，直接影響整個光(guang)(guang)(guang)伏(fu)(fu)系(xi)(xi)統的(de)(de)(de)(de)發(fa)電效(xiao)(xiao)率。SiC器(qi)(qi)件(jian)作為寬禁帶(dai)半導(dao)體，長處正是(shi)更高的(de)(de)(de)(de)能(neng)(neng)(neng)源轉化(hua)效(xiao)(xiao)率，其性能(neng)(neng)(neng)優勢與光(guang)(guang)(guang)伏(fu)(fu)逆(ni)變(bian)器(qi)(qi)的(de)(de)(de)(de)迭代需求有(you)(you)著較高的(de)(de)(de)(de)契合度(du)。相對(dui)Si基(ji)器(qi)(qi)件(jian)，SiC能(neng)(neng)(neng)為光(guang)(guang)(guang)伏(fu)(fu)逆(ni)變(bian)器(qi)(qi)帶(dai)來(lai)更高的(de)(de)(de)(de)轉換效(xiao)(xiao)率、更低的(de)(de)(de)(de)能(neng)(neng)(neng)量損耗，從而有(you)(you)效(xiao)(xiao)縮小系(xi)(xi)統體積(ji)、增(zeng)加功率密度(du)、延長器(qi)(qi)件(jian)使用(yong)(yong)壽命、降低生(sheng)產(chan)成本。目前(qian)，商用(yong)(yong)光(guang)(guang)(guang)伏(fu)(fu)系(xi)(xi)統多以兩級式光(guang)(guang)(guang)伏(fu)(fu)為主。前(qian)級（DC/DC變(bian)換器(qi)(qi)）的(de)(de)(de)(de)功能(neng)(neng)(neng)是(shi)升壓和MPPT，后級（DC/AC）實(shi)現逆(ni)變(bian)并網(wang)(wang)，耐(nai)高壓SiC MOSFET與大電流(liu)(liu)的(de)(de)(de)(de)SiC二極管將(jiang)(jiang)大顯身(shen)手。

儲能系統(tong)提高(gao)(gao)(gao)了(le)電(dian)(dian)(dian)(dian)網運行(xing)的(de)(de)(de)(de)效率，減少了(le)在電(dian)(dian)(dian)(dian)網高(gao)(gao)(gao)峰(feng)時期的(de)(de)(de)(de)局部電(dian)(dian)(dian)(dian)量擁塞(sai)造(zao)成線路損耗。儲能系統(tong)還可(ke)以減少為滿足用(yong)電(dian)(dian)(dian)(dian)系統(tong)高(gao)(gao)(gao)峰(feng)需求(qiu)而建造(zao)更多發(fa)電(dian)(dian)(dian)(dian)廠的(de)(de)(de)(de)需要。ESS的(de)(de)(de)(de)核(he)心部件(jian)是(shi)雙向DC/DC和(he)DC/AC功率轉換(huan)系統(tong)，它將所(suo)有的(de)(de)(de)(de)電(dian)(dian)(dian)(dian)網、光伏電(dian)(dian)(dian)(dian)池板(ban)、風力發(fa)電(dian)(dian)(dian)(dian)機、電(dian)(dian)(dian)(dian)動(dong)汽車(che)和(he)電(dian)(dian)(dian)(dian)池連接在一起，并實現(xian)它們之間的(de)(de)(de)(de)功率轉換(huan)。SiC技術可(ke)以實現(xian)高(gao)(gao)(gao)壓、高(gao)(gao)(gao)頻和(he)高(gao)(gao)(gao)效率的(de)(de)(de)(de)解決(jue)方案，這是(shi)所(suo)有儲能系統(tong)的(de)(de)(de)(de)關鍵要求(qiu)。基(ji)于(yu)SiC器件(jian)的(de)(de)(de)(de)儲能系統(tong)將在優(you)化配電(dian)(dian)(dian)(dian)、穩定電(dian)(dian)(dian)(dian)網、平滑電(dian)(dian)(dian)(dian)力需求(qiu)、更好地利用(yong)可(ke)再生能源等方面發(fa)揮更大(da)作用(yong)。

目(mu)前(qian)，快充(chong)(chong)(chong)能(neng)力（5-10分(fen)鐘基(ji)本(ben)充(chong)(chong)(chong)滿）將是新能(neng)源(yuan)汽(qi)車(che)全面(mian)替代燃(ran)油車(che)的(de)最后一(yi)塊(kuai)拼圖(tu)，SiC將在其中發(fa)揮重(zhong)要(yao)(yao)作(zuo)用(yong)。越(yue)來越(yue)多的(de)車(che)企正在朝(chao)著(zhu)800V平臺發(fa)展，勢必將在充(chong)(chong)(chong)電(dian)(dian)(dian)樁(zhuang)領域導(dao)入高壓大功率(lv)(lv)模(mo)塊(kuai)，傳統(tong)Si基(ji)與(yu)IGBT器(qi)(qi)件(jian)(jian)的(de)阻斷(duan)電(dian)(dian)(dian)壓低，疊加多級拓撲(pu)則會對尺寸和效率(lv)(lv)造(zao)成(cheng)挑戰。基(ji)于(yu)SiC的(de)ACDC轉換器(qi)(qi)可(ke)(ke)以很好地解決(jue)這些問題(ti)，使(shi)用(yong)更(geng)少數量的(de)器(qi)(qi)件(jian)(jian)，占用(yong)更(geng)少的(de)電(dian)(dian)(dian)路面(mian)積，實現(xian)更(geng)高的(de)峰值效率(lv)(lv)。為導(dao)入800V充(chong)(chong)(chong)電(dian)(dian)(dian)架構，充(chong)(chong)(chong)電(dian)(dian)(dian)樁(zhuang)的(de)充(chong)(chong)(chong)電(dian)(dian)(dian)效率(lv)(lv)也需要(yao)(yao)進(jin)一(yi)步提升，直流(liu)充(chong)(chong)(chong)電(dian)(dian)(dian)功率(lv)(lv)從目(mu)前(qian)低于(yu)120kW，不斷(duan)提升至350kW，甚至480kW。這意味(wei)著(zhu)需要(yao)(yao)將目(mu)前(qian)主(zhu)流(liu)的(de)20kW、30kW的(de)充(chong)(chong)(chong)電(dian)(dian)(dian)模(mo)塊(kuai)平滑(hua)擴容至40kW甚至更(geng)高功率(lv)(lv)。基(ji)于(yu)SiC解決(jue)方案帶來的(de)耐高溫、高開關頻率(lv)(lv)等技術特征，將助(zhu)力模(mo)塊(kuai)優化電(dian)(dian)(dian)路設(she)計、器(qi)(qi)件(jian)(jian)選型、風道(dao)設(she)計、溫度保護，實現(xian)更(geng)高的(de)可(ke)(ke)靠(kao)性。